Band-Order Anomaly at the ?-Al<sub>2</sub>O<sub>3</sub>/SrTiO<sub>3</sub> Interface Drives the Electron-Mobility Boost

نویسندگان

چکیده

Rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant improvement yet relatively low electron mobility oxide materials. Recently, boost about two orders magnitude has been demonstrated at the spinel/perovskite {\gamma}-Al2O3/SrTiO3 interface compared to paradigm perovskite/perovskite LaAlO3/SrTiO3. We explore fundamental physics behind this phenomenon from direct measurements momentum-resolved electronic structure using resonant soft-X-ray angle-resolved photoemission. find anomaly orbital ordering mobile electrons which depopulates states top STO layer. This rearrangement system pushes density away that reduces its overlap with interfacial defects weakens electron-phonon interaction, both effects contributing boost. A crystal-field analysis shows band order alters owing symmetry breaking between spinel {\gamma}-Al2O3 perovskite SrTiO3. The band-order engineering exploiting properties emerges as another route performance devices.

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ژورنال

عنوان ژورنال: ACS Nano

سال: 2021

ISSN: ['1936-0851', '1936-086X']

DOI: https://doi.org/10.1021/acsnano.0c07609